PhD Scholarship in the area of advanced Power Electronics using wide-bandgap (WBG) semiconductor devices

A funded PhD opportunity is available at the University of Bristol in the area of advanced power electronics using wide-bandgap (WBG) semiconductor devices, with a particular focus on silicon carbide (SiC) and gallium nitride (GaN) technologies. The project will investigate next-generation high-efficiency, high-power-density power conversion systems for applications including aerospace, electric transportation, renewable energy, and advanced industrial systems.

Wide-bandgap devices offer significant advantages over conventional silicon power semiconductors, including faster switching speeds, higher operating temperatures, and reduced power losses. However, achieving their full performance potential requires major advances in gate driving, high-bandwidth sensing, packaging, electromagnetic compatibility, and long-term reliability assessment. The PhD research will therefore focus on the development of advanced active gate driving techniques and ultra-fast sensing solutions capable of enabling stable and efficient operation of high-speed SiC and GaN converters under demanding operating conditions.

The project will also investigate reliability and degradation mechanisms in WBG devices, including the effects of high switching speeds, thermal cycling, parasitic interactions, and extreme operating environments. Experimental characterisation, accelerated lifetime testing, and physics-informed modelling will be used to evaluate device behaviour and improve converter robustness and reliability.

The student will gain experience in the design, modelling, fabrication, and experimental testing of state-of-the-art power electronic systems using advanced laboratory facilities and industrially relevant hardware platforms. Research activities may include high-frequency converter design, PCB and package optimisation, EMI-aware design, thermal management, digital control, and data-driven analysis methods.

This PhD provides an excellent opportunity to contribute to cutting-edge research in wide-bandgap power electronics while developing expertise highly sought after in academia, aerospace, automotive, renewable energy, and semiconductor industries.

PhD Candidates must hold a minimum of an upper Second-Class UK Honours degree or international equivalent in a relevant engineering or science discipline. Applicants must hold/achieve a minimum of a merit at master’s degree level (or international equivalent) in a science, mathematics or engineering discipline. Applicants without a master's qualification may be considered on an exceptional basis, provided they hold a first-class undergraduate degree. Please note, acceptance will also depend on evidence of readiness to pursue a research degree.

If English is not your first language, you need to meet this profile level:

Profile E

Further information about English language requirements and profile levels.

Prior to submitting an online application, you will need to contact the project supervisors to discuss.

Online applications are made at http://www.bris.ac.uk/pg-howtoapply.

Please select ‘PhD Electrical and Electronics Engineering’ on the Programme Choice page.

You will be prompted to enter details of the studentship in the Funding and Research Details sections of the form.

For questions about the research topic, please contact:

Prof Bernard Start, ; and Dr Saeed Jahdi,

For questions about eligibility and the application process please contact

Engineering Postgraduate Research Admissions